Wide Band Gap (WBG) Power Devices Market Size and Forecasts (2021 - 2031), Global and Regional Share, Trends, and Growth Opportunity Analysis

Coverage: Wide Band Gap (WBG) Power Devices Market covers analysis By Material (Silicon Carbide, Zinc Oxide, Gallium Nitride, Gallium Arsenide, Diamond Substrate, Others); Application (Uninterruptable Power Supply, Industrial Motor Drives, Data Centers, Power Grid, Others); End-User Industry (Automotive, Energy and Utility, Industrial, Aerospace and Defense, Others) , and Geography (North America, Europe, Asia Pacific, and South and Central America)

  • Report Code : TIPRE00021529
  • Category : Electronics and Semiconductor
  • Status : Upcoming
  • No. of Pages : 150
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MARKET INTRODUCTION



The WBG devices are small in size and offer reliable operation as compared to silicon-based counterparts. The semiconductor material permits wide band gap power devices to operate at higher voltages, frequencies, and temperatures is creating profitable opportunities for the Wide Band Gap (WBG) Power Devices market in the forecast period.

MARKET DYNAMICS



The growing demand for wide band gap (WBG) power devices in industrial application is driving the Wide Band Gap (WBG) Power Devices market. The high material and substrate costs of SiC and GaN may restrain the growth of the Wide Band Gap (WBG) Power Devices market. Furthermore, the mounting integration of WBG in the electric and hybrid vehicle is anticipated to create market opportunities for the Wide Band Gap (WBG) Power Devices market during the forecast period.

MARKET SCOPE



The "Global Wide Band Gap (WBG) Power Devices Market Analysis to 2031" is a specialized and in-depth study of the Wide Band Gap (WBG) Power Devices market with a special focus on the global market trend analysis. The report aims to provide an overview of Wide Band Gap (WBG) Power Devices market with detailed market segmentation by material, application, and end-user industry, and geography. The global Wide Band Gap (WBG) Power Devices market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading Wide Band Gap (WBG) Power Devices market players and offers key trends and opportunities in the Wide Band Gap (WBG) Power Devices market.

MARKET SEGMENTATION



The global Wide Band Gap (WBG) Power Devices market is segmented on the basis of material, application, and end-user industry. Based on material, the market is segmented into silicon carbide, zinc oxide, gallium nitride, gallium arsenide, diamond substrate, and others. On the basis of application, the market is segmented into uninterruptable power supply, industrial motor drivers, data centers, power grid, and others. Similarly, on the basis of end-user industry the market is segmented into automotive, energy and utility, industrial, aerospace and defense, and others..

REGIONAL FRAMEWORK



The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global Wide Band Gap (WBG) Power Devices market based on various segments. It also provides market size and forecast estimates from year 2021 to 2031 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The Wide Band Gap (WBG) Power Devices market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 18 countries globally along with current trend and opportunities prevailing in the region.

The report analyzes factors affecting Wide Band Gap (WBG) Power Devices market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the Wide Band Gap (WBG) Power Devices market in these regions.

MARKET PLAYERS



The reports cover key developments in the Wide Band Gap (WBG) Power Devices market as organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from Wide Band Gap (WBG) Power Devices market are anticipated to lucrative growth opportunities in the future with the rising demand for Wide Band Gap (WBG) Power Devices market. Below mentioned is the list of few companies engaged in the Wide Band Gap (WBG) Power Devices market.

The report also includes the profiles of key Wide Band Gap (WBG) Power Devices market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.

  •   Cree Inc.
  •   GeneSiC Semiconductor Inc.
  •   Infineon Technologies
    4. Microsemi Corporation
  •   Littelfuse, Inc.
  •   Exagan
  •   ROHM Co, Ltd.
  •   STMicroelectronics
  •   Texas Instruments
  •   United Silicon Carbide Inc.

The Insight Partner's dedicated research and analysis team consist of experienced professionals with advanced statistical expertise and offer various customization options in the existing study.

Wide Band Gap (WBG) Power Devices Report Scope

Report Attribute Details
Market size in 2023 US$ XX Million
Market Size by 2031 US$ XX Million
Global CAGR (2023 - 2031) XX%
Historical Data 2021-2022
Forecast period 2024-2031
Segments Covered By Material
  • Silicon Carbide
  • Zinc Oxide
  • Gallium Nitride
  • Gallium Arsenide
  • Diamond Substrate
By Application
  • Uninterruptable Power Supply
  • Industrial Motor Drives
  • Data Centers
  • Power Grid
By End-User Industry
  • Automotive
  • Energy and Utility
  • Industrial
  • Aerospace and Defense
Regions and Countries Covered North America
  • US
  • Canada
  • Mexico
Europe
  • UK
  • Germany
  • France
  • Russia
  • Italy
  • Rest of Europe
Asia-Pacific
  • China
  • India
  • Japan
  • Australia
  • Rest of Asia-Pacific
South and Central America
  • Brazil
  • Argentina
  • Rest of South and Central America
Middle East and Africa
  • South Africa
  • Saudi Arabia
  • UAE
  • Rest of Middle East and Africa
Market leaders and key company profiles
  • Cree Inc.
  • GeneSiC Semiconductor Inc.
  • Infineon Technologies
  • Microsemi Corporation
  • Littelfuse, Inc.
  • Exagan
  • ROHM Co, Ltd.
  • STMicroelectronics
  • Texas Instruments
    • Historical Analysis (2 Years), Base Year, Forecast (7 Years) with CAGR
    • PEST and SWOT Analysis
    • Market Size Value / Volume - Global, Regional, Country
    • Industry and Competitive Landscape
    • Excel Dataset
    Report Coverage

    Report Coverage

    Revenue forecast, Company Analysis, Industry landscape, Growth factors, and Trends

    Segment Covered

    Segment Covered

    This text is related
    to segments covered.

    Regional Scope

    Regional Scope

    North America, Europe, Asia Pacific, Middle East & Africa, South & Central America

    Country Scope

    Country Scope

    This text is related
    to country scope.

    Trends and growth analysis reports related to Electronics and Semiconductor : READ MORE..   

    The List of Companies

    1. Cree Inc.
    2. GeneSiC Semiconductor Inc.
    3. Infineon Technologies
    4. Microsemi Corporation
    5. Littelfuse, Inc.
    6. Exagan
    7. ROHM Co, Ltd.
    8. STMicroelectronics
    9. Texas Instruments
    10. United Silicon Carbide Inc.

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