Gallium Nitride Gan Semiconductor Device Market Size And Share

  • Report Code : TIPRE00039440
  • Category : Electronics and Semiconductor
  • No. of Pages : 150
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Gallium Nitride (GaN) Semiconductor Device Market Size 2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

  • CAGR (2025 - 2031)
    5.5%
  • Market Size 2024
    US$ XX million
  • Market Size 2031
    US$ XX Million

Report Coverage

  • Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
  • Key future trends
  • Detailed PEST/Porter’s Five Forces and SWOT analysis
  • Industry landscape and competition analysis & recent developments
  • Detailed company profiles
  • Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

  • Fujitsu Ltd
  • Efficient Power Conversion Corporation
  • Transphorm Inc
  • Infineon Technologies AG
  • NXP Semiconductors
  • Qorvo Inc
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation

Regional Overview

  • North America
  • Europe
  • Asia-Pacific
  • South and Central America
  • Middle East and Africa

Market Segmentation

By Type
  • Opto-semiconductor
  • RF Semiconductor
  • Power Semiconductor
By Device
  • Discrete
  • Integrated
  • HEMT
  • MMIC
By Application
  • Lighting and Lasers
  • Power Drives
By Voltage Range
  • Less than 100
  • V100-500 V
  • More than 500 V